ds(on) symbol v ds v gs i dm t j ,t stg parameter symbol typ max t10s 42 50 steadystate 74 90 steadystate r q jl 25 30 pulseddraincurrent c powerdissipation b t a =25c junctionandstoragetemperaturerange t a =70c continuousdrain current units parameter t a =25c t a =70c v v a i d gatesourcevoltage drainsourcevoltage 12 absolute maximum ratings t a =25c unless otherwise noted maximum p d maximumjunctiontolead c/w thermal characteristics units maximumjunctiontoambient a c/w maximumjunctiontoambient ad c/w r q ja c 55to150 w 8 60 9 7 2.5 1.6 AON4407 12v p-channel mosfet features v ds (v)=12v i d =9a(v gs =4.5v) r ds(on) <20m(v gs =4.5v) r ds(on) <25m(v gs =2.5v) r ds(on) <31m(v gs =1.8v) theAON4407usesadvancedtrenchtechnologyto provideexcellentr ,lowgatechargeandoperation withgatevoltagesaslowas1.8v.thisdeviceissuitable foruseasaloadswitch. g d s rg dfn 3x2 top view bottom view pin 1 g d d d s d d d general description www.freescale.net.cn 1 / 5
symbol min typ max units bv dss 12 v 1 t j =55c 5 i gss 10 m a v gs(th) 0.35 0.5 0.85 v i d(on) 60 a 16.5 20 t j =125c 22 26 20 25 m w 24 31 m w 29 38 m w g fs 45 s v sd 0.53 1 v i s 2.5 a c iss 1740 2100 pf c oss 334 pf c rss 200 pf r g 1.3 1.7 k w q g 19 23 nc q gs 4.5 nc q gd 5.3 nc t d(on) 240 ns t r 580 ns t d(off) 7 m s t f 4.2 m s t rr 22 27 ns q rr 17 nc bodydiodereverserecoverytime bodydiodereverserecoverycharge i f =9a,di/dt=100a/ m s drainsourcebreakdownvoltage onstatedraincurrent i d =250 m a,v gs =0v v gs =4.5v,v ds =5v v gs =4.5v,i d =9a reversetransfercapacitance i f =9a,di/dt=100a/ m s electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a gatethresholdvoltage v ds =v gs i d =250 m a v ds =12v,v gs =0v v ds =0v,v gs =8v zerogatevoltagedraincurrent gatebodyleakagecurrent forwardtransconductance diodeforwardvoltage r ds(on) staticdrainsourceonresistance m w v gs =2.5v,i d =8.5a i s =1a,v gs =0v v ds =5v,i d =9a v gs =1.5v,i d =7a v gs =1.8v,i d =7.5a switching parameters totalgatecharge gatesourcecharge gatedraincharge v gs =4.5v,v ds =6v,i d =9a turnonrisetime turnoffdelaytime v gs =4.5v,v ds =6v,r l =0.67 w , r gen =3 w turnofffalltime turnondelaytime dynamic parameters maximumbodydiodecontinuouscurrent gateresistance v gs =0v,v ds =0v,f=1mhz v gs =0v,v ds =6v,f=1mhz inputcapacitance outputcapacitance a.thevalueofr q ja ismeasuredwiththedevicemountedon1in 2 fr4boardwith2oz.copper,inastillairenvironmentwitht a =25c.thevalue inanygivenapplicationdependsontheuser'sspecificboarddesign. b.thepowerdissipationp d isbasedont j(max) =150c,using 10sjunctiontoambientthermalresistance. c.repetitiverating,pulsewidthlimitedbyjunctiontemperaturet j(max) =150c.ratingsarebasedonlowfrequencyanddutycyclestokeepinitial t j =25c. d.ther q ja isthesumofthethermalimpedencefromjunctiontoleadr q jl andleadtoambient. e.thestaticcharacteristicsinfigures1to6areobtainedusing<300 m spulses,dutycycle0.5%max. f.thesecurvesarebasedonthejunctiontoambientthermalimpedencewhichismeasuredwiththedevicemountedon1in 2 fr4boardwith 2oz.copper,assumingamaximumjunctiontemperatureoft j(max) =150c.thesoacurveprovidesasinglepulserating. rev1:june2009 AON4407 12v p-channel mosfet www.freescale.net.cn 2 / 5
typical electrical and thermal characteristics i f =6.5a,di/dt=100a/ m s thisproducthasbeendesignedandqualifiedfortheconsumermarket.applicationsorusesascritical componentsinlifesupportdevicesorsystemsarenotauthorized.aosdoesnotassumeanyliabilityarising outofsuchapplicationsorusesofitsproducts.aosreservestherighttoimproveproductdesign, functionsandreliabilitywithoutnotice. 0 10 20 30 40 50 60 0 1 2 3 4 5 -v ds (volts) figure 1: on-region characteristics(note e) -i d (a) 2.5v 4.5v 2v 3v 0 10 20 30 40 50 60 0 0.5 1 1.5 2 2.5 3 -v gs (volts) figure 2: transfer characteristics(note e) -i d (a) 25c 125c v ds =5v 10 15 20 25 30 35 40 45 0 2 4 6 8 10 12 14 16 18 20 -i d (a) figure 3: on-resistance vs. drain current and gate voltage(note e) r ds(on) (m w w w w ) v gs =4.5v v gs =1.5v v gs =1.8v v gs =2.5v 1e05 1e04 1e03 1e02 1e01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 -v sd (volts) figure 6: body-diode characteristics(note e) -i s (a) 25c 125c 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature(note e) normalized on-resistance 10 15 20 25 30 35 40 45 50 0 2 4 6 8 -v gs (volts) figure 5: on-resistance vs. gate-source voltage(note e) r ds(on) (m w w w w ) i d =9a 25c 125c v gs =1.5v v gs =4.5v i d =9a v gs =1.5v i d =7a v gs =1.8v i d =7.5a AON4407 12v p-channel mosfet www.freescale.net.cn 3 / 5
typical electrical and thermal characteristics i f =6.5a,di/dt=100a/ m s thisproducthasbeendesignedandqualifiedfortheconsumermarket.applicationsorusesascritical componentsinlifesupportdevicesorsystemsarenotauthorized.aosdoesnotassumeanyliabilityarising outofsuchapplicationsorusesofitsproducts.aosreservestherighttoimproveproductdesign, functionsandreliabilitywithoutnotice. 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 4 8 12 16 20 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 400 800 1200 1600 2000 2400 2800 0 2 4 6 8 10 12 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 1 10 100 1000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 10: single pulse power rating junction- to-ambient (note f) power (w) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance(note f) z q q q q ja normalized transient thermal resistance 0.01 0.1 1 10 100 0.01 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note f) 10ms 1ms 100ms 10s dc r ds(on) limited t j(max) =150c t a =25c 10 m s v ds =6v i d =9a singlepulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =90c/w t on t p d indescendingorder d=0.5,0.3,0.1,0.05,0.02,0.01,singlepulse t j(max) =150c t a =25c AON4407 12v p-channel mosfet www.freescale.net.cn 4 / 5
vdc ig vds dut vdc vgs vgs qg qgs qgd charge gatechargetestcircuit&w aveform + + 10v ig vgs + vdc dut l vgs isd dioderecoverytestcircuit&w aveforms vds vds+ di/dt rm rr vdd vdd q=idt t rr isd vds f i i vdc dut vdd vgs vds vgs rl rg resistiveswitchingtestcircuit&w aveforms + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) AON4407 12v p-channel mosfet www.freescale.net.cn 5 / 5
|
